Review of laser scanning methods for microelectronic semiconductor structures investigation

The development and widespread of high-tech microelectronic products impose increased requirements on the quality reliability microcircuits. most effective methods for improvement electronic systems include diagnostic non-destructive testing (NDT) selective destructive in special cases. Studies using visual inspection electrical testing, consisting functional parametric do not provide enough information to detect latent defects (for example, macro-defects SiO 2 layers CMOS chips) fakes counterfeits. A fake integrated circuit (IC) may contain an undeclared malicious modification circuit, called hardware bugs. common ICs studying tools are based microfocus X-ray sources, scanning acoustic microscopes, optical electron fluorescence spectroscopes. Products destruction avoidance is a fundamental point, technological process control crystal manufacturing. Investigation light microscope one accessible method microchip NDT. Semiconductor structure from side device layer limited by shielding effect metallization, since metal opaque light. This limitation can be overcome alternative approach irradiating IC substrate with laser sources near-IR range. paper provides brief overview major used microscopy analyze structures, responses, features operating modes semiconductor circuits. main advantages limitations use described, as well what about product obtained result scanning.